advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v fast switching speed r ds(on) 25m pdip-8 package i d 7a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice 200528031 AP9960GD pb free plating product parameter rating drain-source voltage 40 gate-source voltage 20 continuous drain current 3 7 continuous drain current 3 5.6 pulsed drain current 1 20 total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 thermal data parameter storage temperature range the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g2 d2 s2 g1 d1 s1 d1 d1 d2 d2 s1 g1 s2 g2 pdip-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.032 -v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m v gs =4.5v, i d =5a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =7a - 25 - s i dss drain-source leakage current (t j =25 o c) v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =32v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =7a - 14.7 - nc q gs gate-source charge v ds =20v - 7.1 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6.8 - nc t d(on) turn-on delay time 2 v ds =20v - 11.5 - ns t r rise time i d =1a - 6.3 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 28.2 - ns t f fall time r d =20 - 12.6 - ns c iss input capacitance v gs =0v - 1725 - pf c oss output capacitance v ds =25v - 235 - pf c rss reverse transfer capacitance f=1.0mhz - 145 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 1.54 a v sd forward on voltage 2 i s =2.3a, v gs =0v - - 1.3 v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.mounted on 1 in 2 copper pad of fr4 board ; 90 /w when mounted on min. copper pad. AP9960GD
AP9960GD fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 8 16 24 32 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 6.0v 5.0v 4.5v v gs =4.0v 0 12 24 36 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 5.0v 4.5v v gs =4.0v 0.2 0.8 1.4 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7.0a v gs =10v 0 20 40 60 80 24681012 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7.0a t a =25 0.01 0.1 1 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) tj=25 o c tj=150 o c 0.5 1 1.5 2 2.5 3 3.5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedanc e fig 11. switching time waveform fig 12. gate charge waveform AP9960GD 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =90 /w t t 0.02 0.0 0.05 0.1 0.2 duty=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1s dc 1ms 10ms 100ms 0 3 6 9 12 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7.0a v ds =12v v ds =16v v ds =20v 10 100 1000 10000 1 7 13 19 25 31 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
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